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1 / 1 2 n ??? n - channel mosfet j cs 5n60 c order codes ? marking ? package halogen free ? packaging device weight jcs 5n60 v c - o - v - n - b jcs 5n60 v ipak no tube 0.3 5 g(typ) jcs 5n60 r c - o - r - n - b jcs 5n60 r dpak no tube 0.3 0 g(typ) jcs 5n60 r c - o - r - n - a jcs 5n60 r dpak no brede 0.30 g(typ) jcs 5n60 c c - o - c - n - b jcs 5n60 c to - 220c no tube 2.15 g(typ) jcs 5n60 f c - o - f - n - b jcs 5n60 f to - 220mf no tube 2.20 g(typ) ? main characteristics i d 4 .0 a v dss 6 00 v rdson vgs=10v 2.5 qg 9 nc ? ? ??? ? ? led ? applications ? high frequency switching mode power supply ? electronic ballast ? led power supply ? ? ? ? c rss ( ? 12 pf) ? ?? ? ??? ? ? dv/dt ? rohs ? features ? l ow gate charge ? low c rss (typical 12 pf ) ? fast switching ? 100% av alanche tested ? improved dv/dt capa bility ? rohs product ? order message ? package r
jcs 5 n 60 c 20 1 50 7a 2 / 1 2 ? ? absolute ratings (tc=25 ) * ?? *drain current limited by maximum junction temperature ? parameter symbol ? value unit jcs 5n60 v c /r c jcs 5n60 c c jcs 5n60 f c ???? dss 600 v ? d t=25 t=100 ? ? 1 drain current - pulse dm 1 6 16 * a ??? gss 30 v ? ? 2 single pulsed avalanche energy as 416 mj ? ? 1 avalanche current ar 4.0 a ?? ? 1 ar 1 1 .0 mj ??? ? 3 peak diode recovery dv/dt ? d t c =25 - derate above 25 ??? j stg - 55 ?? l 300 r
jcs 5 n 60 c 20 1 50 7a 3 / 1 2 e lectrical c haracteristics ? parameter symbol tests conditions min typ max units ? off C characteristics ??? drain - source v oltage bv dss i d =250 a, v gs =0v 6 00 - - v ?? breakdown voltage temperature coefficient bv dss / t j i d =250 a, referenced to 25 - 0. 65 - v/ ???? zero gate voltage drain current i dss v ds = 6 00v,v gs =0v, t c =25 - - 1 0 a v ds = 48 0v, t c =125 - - 1 0 0 a ?? gate - body leakage current, forward i gssf v ds =0v, v gs =30v - - 100 na ?? gate - body leakage current, reverse i gssr v ds =0v, v gs = - 30v - - - 100 na ?? on - characteristics ?? gate threshold voltage v gs(th) v ds = v gs , i d =250 a 2 .0 - 4 .0 v ?? static drain - source on - resistance r ds(on) v gs =10v , i d = 2 a - 2.0 2.5 ? forward transconductance g fs v ds = 40v , i d = 2 a note 4 - 3 .7 - s ? dynamic characteristics input capacitance c iss v ds =25v, v gs =0v, f=1.0mh z - 69 0 81 0 p f output capacitance c oss - 6 2 8 2 pf reverse transfer capacitance c rss - 1 2 1 7 pf r
jcs 5 n 60 c 20 1 50 7a 4 / 1 2 e lectrical c haracteristics switching characteristics ?? turn - on delay time t d (on) v dd = 30 0v,i d = 4 a,r g =25? note 4 5 - 3 0 50 ns ? turn - on rise time t r - 7 5 120 ns ?? turn - off delay time t d (off) - 6 0 150 ns ?? turn - off fall time t f - 55 120 ns ? total gate charge q g v ds = 48 0v , i d = 4 a v gs =10v note 4 5 - 9 14 nc ?? gate - source charge q gs - 2 . 9 - nc ?? gate - drain charge q gd - 4 . 0 - nc ????? drain - source diode characteristics and maximum ratings maximum continuous drain - source diode forward current i s - - 4 a maximum pulsed drain - source diode forward current i sm - - 1 6 a ? drain - source diode forward voltage v sd v gs =0v, i s = 4 .0 a - - 1. 4 v ?? reverse recovery time t rr v gs =0v, i s = 4 .0 a di f /dt=100a/ s (note 4) - 33 0 - ns ? reverse recovery charge q rr - 2.6 7 - c ? parameter sy mbol max unit jcs 5n60vc/rc jcs 5n60c c jcs 5n60 f c ??? thermal resistance, junction to case r th(j - c) 2.5 0 1.2 5 3. 79 /w ? thermal resistance, junction to ambient r th(j - a) 83 62.5 62.5 /w ? ? 1 ? 2 l = 48 mh, i as = 4 .0 a, v dd =50v, r g =25 ?, ? t j =25 3 i sd 4 .0 a,di/dt 2 00a/ s,vddbv dss , ? t j =25 4 ? 300 s, ? ? 2 5 ??? notes: 1 pulse width limited by maximum junction temperature 2 l= 48 mh, i as = 4 .0 a, v dd =50v, r g =25 ?,starting t j =25 3 i sd 4 .0 a,di/dt 2 00a/ s,vddbv dss , starting t j =25 4 pulse test pulse width 300s,duty cycle2 5 essentially independent of operating temperature r
jcs 5 n 60 c 20 1 50 7a 5 / 1 2 electrical characteristics (cur ves) on - region characteristics transfer characteristics on - resistance variation vs. drain current and gate voltage body diode forward voltage variation vs. source current and temperature capacitance characteristics gate charge characteristics r 2 4 6 8 10 0.1 1 10 notes 1.250s pulse test 2.v ds =40v 150 i d [a] v gs [v] 25 0.1 1 10 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 notes 1. 250s pulse test 2. v gs =0v 25 150 v sd [v] i dr [a] 10 1 10 v gs top 15v 10v 8v 7v 6.5v 6v 5.5v bottom 5v notes 1. 250s pulse test 2. t c =25 i d [a] v ds [v] 0 1 2 3 4 5 6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2 note t j =25 v gs =10v r ds (on) [ ] i d [a] v gs =20v 0 2 4 6 8 10 12 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 v ds =480v v ds =300v v ds =120v q g toltal gate charge [nc] v gs gate source voltage[v]
jcs 5 n 60 c 20 1 50 7a 6 / 1 2 electrical characteristics (curves) breakdown voltage variation vs. temperature on - resistance variation vs. temperature maximum safe operating area for jcs 4n60 f maximum drain current vs. case temperature maximum safe operating area for jcs 5 n60 v c /r c /c c maximum saf e operating area for jcs 5 n60f c avalanche energy vs. temperature r -75 -50 -25 0 25 50 75 100 125 150 0.90 0.95 1.00 1.05 1.10 1.15 notes 1. v g s =0v 2. i d =250a t j [ ] bv dss (normalized) -75 -50 -25 0 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 notes 1. v gs =10v 2. i d =2.0a r ds (on ) (normalized) t j [ ]
jcs 5 n 60 c 20 1 50 7a 7 / 1 2 electrical characteristics (curves) transient thermal response curve for jcs 5 n60 c c transient thermal response curve for jcs 5 n60 f c transient thermal response curve for jcs 5 n60v c /r c r
jcs 5 n 60 c 20 1 50 7a 8 / 1 2 ? package mechanical data ipak u nit mm r
jcs 5 n 60 c 20 1 50 7a 9 / 1 2 ? package mechanical data dpak reel u nit mm r
jcs 5 n 60 c 20 1 50 7a 10 / 1 2 ? package mechanical data to - 2 20 c u nit mm r
jcs 5 n 60 c 20 1 50 7a 11 / 1 2 ? package mechanical data to - 2 20 mf u nit mm r
jcs 5 n 60 c 20 1 50 7a 12 / 1 2 ? 1. ????????? ?????? ???? 2. ???? ? ?? 3. ????? ?????? 4 . ??? note 1. jilin sino - microelectronics co., ltd sales its product either through direct sales or sales agent , thus, for customers, when or dering , please check with our company. 2. we strongly recommend customers check carefully on the trademark when buying our product, if there is any question, please dont be hesitate to contact us. 3. please do not exceed the absolute maximum ratings of the device when circuit designing. 4. jilin sino - microelectronics co . , ltd reserves the right to make changes in this specification sheet and is subject to change without prior notice. ?? ?????? ???? 99 ?? 132013 ? 86 - 432 - 6 4678411 86 - 432 - 6 4665812 ? w ww.hwdz.com.cn ? ??? 99 ?? 132013 86 - 432 - 6 4675588 6 4675688 6 4678411 : 86 - 432 - 6 4671533 contact jilin sino - microele ctronics co., ltd. add: no.99 shenzhen street, jilin city, jilin province, china. post code: 132013 tel 86 - 432 - 6 4678411 fax 86 - 432 - 6 4665812 web site www.hwdz.com.cn market department add: no.99 shenzhen street, ji lin city, jilin province, china. post code: 132013 tel: 86 - 432 - 6 4675588 6 4675688 6 4678 411 fax: 86 - 432 - 6 4671533 r

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